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APTGF200U120DG
Single Switch with Series diodes NPT IGBT Power Module
EK E C
VCES = 1200V IC = 200A @ Tc = 80C
Application * Zero Current Switching resonant mode Features * Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - M5 power connectors * High level of integration Benefits * Outstanding performance at high frequency operation * Stable temperature behavior * Very rugged * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Low profile * RoHS compliant Max ratings 1200 275 200 600 20 1136 400A @ 1200V Unit V A V W
G
CK
E CK
C
EK G
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Tc = 25C Tc = 80C Tc = 25C Tc = 25C Tj = 150C
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGF200U120DG - Rev 1 July, 2006
APTGF200U120DG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Symbol Cies Coes Cres Qg Qge Qgc Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Emitter Charge Gate - Collector Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions Tj = 25C VGE = 0V VCE = 1200V Tj = 125C Tj = 25C VGE =15V IC = 200A Tj = 125C VGE = VCE, IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz VGS = 15V VBus = 600V IC = 200A Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A R G = 1.2 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 200A R G = 1.2 VGE = 15V Tj = 125C VBus = 600V IC = 200A Tj = 125C R G = 1.2 Min Typ Max 500 750 3.7 6.5 300 Typ 13.8 1.32 0.88 1320 140 800 35 65 320 30 35 65 360 40 22 mJ 12.2 Max Unit A V V nA Unit nF
3.2 4.0 4.5
Dynamic Characteristics
Min
nC
ns
ns
Series diode ratings and characteristics
Symbol Characteristic VRRM IRM IF VF
Maximum Repetitive Reverse Voltage
Test Conditions Tj = 25C Tj = 125C Tc = 70C IF = 240A IF = 480A IF = 240A IF = 240A VR = 800V di/dt =800A/s
Min 1200
Typ
Max 750 1000
Unit V A A
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage
VR=1200V
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
Tj = 25C Tj = 125C Tj = 25C Tj = 125C
400 470 4.8 16
ns C
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APTGF200U120DG - Rev 1 July, 2006
Tj = 125C
240 2 2.3 1.8
2.5 V
APTGF200U120DG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5 IGBT Diode 2500 -40 -40 -40 3 2 Min Typ Max 0.11 0.23 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
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APTGF200U120DG - Rev 1 July, 2006
APTGF200U120DG
Typical Performance Curve
800 Ic, Collector Current (A) Output characteristics (VGE=15V)
250s Pulse Test < 0.5% Duty cycle TJ=25C
200
Ic, Collector Current (A)
Output Characteristics (VGE=10V)
250s Pulse Test < 0.5% Duty cycle T J=25C
600
150
400
TJ=125C
100
TJ=125C
200
50
0 0 2 4 6 VCE, Collector to Emitter Voltage (V) Transfer Characteristics VGE, Gate to Emitter Voltage (V)
250s Pulse Test < 0.5% Duty cycle
0
8
0
1 2 3 VCE, Collector to Emitter Voltage (V)
Gate Charge
IC = 200A TJ = 25C VCE=240V VCE=600V
4
1200
Ic, Collector Current (A)
18 16 14 12 10 8 6 4 2 0 0 200 400
1000 800 600 400 200 0 0
VCE=960V
TJ=125C TJ=25C
4 8 12 VGE, Gate to Emitter Voltage (V)
16
600
800
1000 1200 1400
Gate Charge (nC) On state Voltage vs Junction Temperature
250s Pulse Test < 0.5% Duty cycle VGE = 15V Ic=400A Ic=200A
VCE, Collector to Emitter Voltage (V)
VCE, Collector to Emitter Voltage (V)
9 8 7 6 5 4 3 2 1 0 9
On state Voltage vs Gate to Emitter Volt.
TJ = 25C 250s Pulse Test < 0.5% Duty cycle
6 5 4 3 2 1 0
Ic=400A
Ic=200A
Ic=100A
Ic=100A
10 11 12 13 14 15 VGE, Gate to Emitter Voltage (V)
Breakdown Voltage vs Junction Temp.
16
-50
-25 0 25 50 75 100 TJ, Junction Temperature (C)
125
Collector to Emitter Breakdown Voltage (Normalized)
1.20 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 TJ, Junction Temperature (C) 125
Ic, DC Collector Current (A)
350 300 250
DC Collector Current vs Case Temperature
1.15
150 100 50 0 -25 0 25 50 75 100 125 TC , Case Temperature (C) 150
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APTGF200U120DG - Rev 1 July, 2006
200
APTGF200U120DG
Turn-On Delay Time vs Collector Current td(on), Turn-On Delay Time (ns)
V CE = 600V R G = 1.2 V GE = 15V
Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns)
45
400
V GE=15V, TJ=125C
40
350
35
300
V GE=15V, TJ=25C
30
250
V CE = 600V R G = 1.2
25 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Current Rise Time vs Collector Current
200 0 100 200 300 400 500
ICE, Collector to Emitter Current (A) Current Fall Time vs Collector Current
180
V CE = 600V R G = 1.2
50
TJ = 125C
tr, Rise Time (ns)
tf, Fall Time (ns)
140
40
100
V GE=15V
TJ = 25C
30
VCE = 600V, V GE = 15V, RG = 1.2
60
20 0 100 200 300 400 ICE, Collector to Emitter Current (A) 500
20 0 100 200 300 400 ICE, Collector to Emitter Current (A) 500
Eon, Turn-On Energy Loss (mJ)
60
V CE = 600V RG = 1.2 TJ=125C, V GE=15V
Eoff, Turn-off Energy Loss (mJ)
80
Turn-On Energy Loss vs Collector Current
Turn-Off Energy Loss vs Collector Current
32
V CE = 600V V GE = 15V RG = 1.2 TJ = 125C
24
40
16
20
8
0 0 100 200 300 400 ICE, Collector to Emitter Current (A) 500
0 0 100 200 300 400 500 ICE, Collector to Emitter Current (A)
Switching Energy Losses (mJ)
Switching Energy Losses vs Gate Resistance 56
48 40 32 24 16 8 0 0
C, Capacitance (pF)
V CE = 600V V GE = 15V TJ= 125C
Capacitance vs Collector to Emitter Voltage 100000
Cies
Eon, 200A
Eoff, 200A
10000
Coes Cres
Eoff, 100A
100 2.5 5 7.5 10 Gate Resistance (Ohms) 12.5 0 10 20 30 40 VCE, Collector to Emitter Voltage (V) 50
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APTGF200U120DG - Rev 1 July, 2006
Eon, 100A
1000
APTGF200U120DG
Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 120 100 80 60 40 20 0 20 60 100 140 180 IC , Collector Current (A) 220
Hard switching ZCS ZVS
Reverse Bias Safe Operating Area 450 I C, Collector Current (A) 400 350 300 250 200 150 100 50 0 0 400 800 1200 V CE, Collector to Emitter Voltage (V)
VCE = 600V D = 50% RG = 1.2 TJ = 125C TC= 75C
0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Single Pulse 0.0001 0.001 0.01 0.1 1 10
0 0.00001
Rectangular Pulse Duration (Seconds)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGF200U120DG - Rev 1 July, 2006

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